PE3406A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
* ESD=2500V
* Lead free product is acquired
* Surface mount package
Application
<.
Genera Features
* VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
* ESD=2500V
* Lea.
The PE3406A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.
Genera Features
* VDS = 30V,ID = 5.8A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ V.
Image gallery